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Wafers
- Specification
Ox wafer 
Ox wafer
Size : dia. 8" ; dia. 12"
customized stack filmSiN wafer 
SiN wafer
Size : dia. 8" ; dia. 12"
customized stack film
W wafer 
W wafer
Size : dia. 8" ; dia. 12"
customized stack film
Al wafer 
Al wafer
Size : dia. 8" ; dia. 12"
customized stack film
Cu wafer 
Cu wafer
Size : dia. 8" ; dia. 12"
customized stack film
Ti/TiN wafer 
Ti/TiN wafer
Size : dia. 8" ; dia. 12"
customized stack film
Ta/TaN wafer 
Ta/TaN wafer
Size : dia. 8" ; dia. 12"
customized stack film
Al2O3 substrate 
Al2O3 substrate
Dimension: dia.4“x0.38mmT ; 114x114x0.38mmT
Purity: 96%
Density: 3.97g/cm3
Melting point: 2303°C
Application:
Customization specification
AlN substrate 
AlN substrate
Dimension: dia.4"x0.32mmT ; dia. 2"x0.32mmT
Purity:
Density: 3.26 g/cm³
Melting point: 2,200 °C
Application:
Customization specification
Graphite substrate 
Graphite substrate
Dimension: 25x25x1mmT
Purity:
Density:2.5 g/cm³
Melting point: 3652度
Application:
Customization specification
SiO2 substrate 
SiO2 substrate
Dimension: Customization specification
Purity:
Density:2.5 g/cm³
Melting point:
Application:
Customization specification
